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| geometry process details principal device types cmr1-02 series cmr1-02m series cxr1-04 cxr1-04c czr1-04 czr1-04c gross die per 4 inch wafer 6,200 process CPD69 general purpose rectifier 1 amp glass passivated rectifier chip process glass passivated mesa die size 42.5 x 42.5 mils die thickness 12.5 mils anode bonding pad area 32 x 32 mils top side metalization ni/au - 5,000?/2,000? back side metalization ni/au - 5,000?/2,000? www.centralsemi.com r5 (5-april 2011) http://
process CPD69 typical electrical characteristics www.centralsemi.com r5 (5-april 2011) http:// |
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